DocumentCode :
2560740
Title :
A R-evolution in power electronics: from "intelligent" to "super smart power" in automotive
Author :
Marchio, Fabio ; Poletto, Vanni ; Russo, Alfio ; Torrisi, Giovanni ; Notaro, Joseph ; Burlak, Gary ; Mirowski, Marian
fYear :
2004
fDate :
21-22 Oct. 2004
Firstpage :
27
Lastpage :
34
Abstract :
Automotive has become one of the most stringent markets for the semiconductor industry: very "cheap" products manufactured with leading-edge technologies while meeting the highest quality and reliability levels are required. The penetration of semiconductors inside the vehicle is forecasted to rapidly increase in the coming years. According to industry analysts the average silicon content per vehicle will increase from $175 in 1998 to $260 in 2010. Today a high-end vehicle is estimated to contain more than 70 modules with electronics constituting 25% of the vehicle cost and containing $1000 of silicon. Automotive modules, populated with an increasing number of components implementing a wide range of applications, have to deal with higher and higher currents with more and more "intelligence" and diagnostics. The ability to implement smaller, smarter, higher current density devices, without impacting quality and reliability (on the contrary, vastly improving them), results in a significant enhancement for automotive applications. This work will describe several different examples of "state of the art" power ICs from STMicroelectronics. An overview of how technology, design, assembly and test are addressing the specific requirements of the harsh automotive environment will be given.
Keywords :
automotive electronics; power integrated circuits; semiconductor device reliability; STMicroelectronics; automotive applications; automotive modules; power IC; power electronics; reliability; semiconductor industry; super smart power; Automotive engineering; Economic forecasting; Electronics industry; Intelligent vehicles; Lead compounds; Manufacturing industries; Power electronics; Semiconductor device manufacture; Semiconductor device reliability; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics in Transportation, 2004
Print_ISBN :
0-7803-8538-1
Type :
conf
DOI :
10.1109/PET.2004.1393786
Filename :
1393786
Link To Document :
بازگشت