X-Ray Topography Research of Dislocation Structure in Epitaxial GeSi Films Grown on Vicinal (001) Si Substrates

Author

Krasotin, A.Y. ; Kolesnikov, A.V. ; Trukhanov, E.M. ; Vasilenko, A.P. ; Derjabin, A.S. ; llin, A.S.

Author_Institution

Novosibirsk State Tech. Univ.

fYear

2006

fDate

1-5 July 2006

Firstpage

67

Lastpage

68

Abstract

It has been theoretically predicted for the quasi-equilibrium conditions that at the first relaxation stage two dislocation arrays are formed in the vicinal (1 1 15macr) interface. The slip plane of these arrays is the same $(1 1 1) and Burgers vector directions are [0 2 2] and [2 0 2]. In this paper the investigation results of the stress relieving in GeSi/Si epitaxial heterosystem are presented, it was found that about 30% MDs have (a/2)_{[0 2 2]} Burgers vector and 30% - (a/2) [2 0 2] one. The total amount of MDs with (a/2)[0 2 2] and (a/2)[2 0 2] Burgers vector is less than 40% of all registered MDs. This result confirms theoretical data

Keywords

X-ray topography; dislocation structure; epitaxial growth; epitaxial layers; germanium compounds; silicon; substrates; Burgers vector; GeSi-Si; GeSi/Si epitaxial heterosystem; X-ray topography; dislocation structure; epitaxial GeSi films; quasiequilibrium conditions; vicinal interface; vicinal silicon substrates; Fasteners; Germanium silicon alloys; IEEE members; Lattices; Semiconductor films; Silicon germanium; Stress; Substrates; Surfaces; X-ray diffraction; Topography; misfit dislocations; vicinal orientations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

5-7782-0646-1

Type

conf

DOI

10.1109/SIBEDM.2006.230309

Filename

1694075