Investigation of the role of a-Si:H based-alloy solar cell thickness on 1.00 MeV proton irradiation resistance

Author

Abdulaziz, Salman S. ; Woodyard, James R.

Author_Institution

Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1248

Abstract

The role of thickness and composition in the 1.00 MeV proton radiation resistance of hydrogenated amorphous silicon based-alloys solar cells is reported. Rutherford backscattering spectrometry is used to analyze the cells. Single-junction a-Si:H and a-Si_xGe_1-x:H, and dual-junction a-Si:H solar cells were investigated using proton fluences in the 1.00×10¹³ to 1.00×10¹⁵ cm^-2 range. The investigations show that 1.10 μm thick single-junction a-Si:H cells have a lower radiation resistance than 0.32 μm thick cells

Keywords

Ge-Si alloys; Rutherford backscattering; amorphous semiconductors; elemental semiconductors; hydrogen; proton effects; silicon; solar cells; 1.00 MeV; 1.1 micron; Rutherford backscattering spectrometry; Si_xGe_1-x:H; amorphous Si:H solar cells; dual-junction solar cells; proton irradiation resistance; semiconductor; single-junction solar cells; Amorphous silicon; Annealing; Computational Intelligence Society; Crystallization; Degradation; Electric resistance; Photovoltaic cells; Protons; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169408

Filename

169408