Title :
Gallium arsenide-on-germanium solar cells
Author :
Iles, P.A. ; Ho, F. ; Yeh, M. ; Datum, G. ; Billets, S.
Author_Institution :
Appl. Solar Energy Corp., City of Industry, CA, USA
Abstract :
The development of technology and processing methods for producing high-efficiency GaAs solar cells for use on spacecraft is described. High-throughput MOCVD (metalorganic chemical vapor deposition) and subsequent cell processing led to delivery of production quantities of GaAs cells formed on GaAs substrates. To meet advanced array requirements calling for high-efficiency cells which are larger and thinner, GaAs cells were grown on Ge substrates. How GaAs/Ge cells are now meeting production requirements is described
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor growth; solar cells; space vehicle power plants; vapour phase epitaxial growth; GaAs-Ge; Ge; MOCVD; metalorganic chemical vapor deposition; semiconductor; solar cells; spacecraft; Gallium arsenide; III-V semiconductor materials; Inductors; MOCVD; Photovoltaic cells; Production; Solar energy; Space technology; Temperature; Throughput;
Conference_Titel :
Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety
Conference_Location :
Washington, DC
DOI :
10.1109/IECEC.1989.74559
