Title :
New concepts for IT-DRAMs: Overcoming the scaling limits
Author :
Rodríguez, Noel ; Cristoloveanu, Sorin ; Gámiz, Francisco
Author_Institution :
Dept. Electron. y Tecnol. de Comput., Univ. of Granada, Granada, Spain
Abstract :
Capacitorless Single-Transistor DRAM cells (IT-DRAM) are attractive for the replacement of the highly complex standard DRAM cells based on the combination of a transistor and a capacitor. However, their implementation is questioned mainly due to scalability concerns in ultrathin silicon films. In this paper, we will present new concepts of IT-DRAM memory cells based on multi-body architectures that are able to fulfil the scalability requirements of advanced technology nodes. The proposed devices, belonging to the A-RAM family, feature enhanced resolution between `0´ and `1´ states as well as very low bias operation.
Keywords :
DRAM chips; elemental semiconductors; integrated circuit reliability; silicon; thin films; A-RAM family; IT-DRAM memory cells; Si; capacitorless single-transistor DRAM cells; multibody architectures; scalability requirements; scaling limits; ultrathin films; very low bias operation; Charge carrier processes; Electric fields; Logic gates; Random access memory; Silicon; Silicon on insulator technology; Transistors; A-RAM; A2RAM; Floating-Body; IT-DRAM; Supercoupling;
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-61284-173-1
DOI :
10.1109/SMICND.2011.6095698
