Title :
Laser ablated nanostructured tin oxide thin films for optoelectronic device applications
Author :
Sreedevi, K.S. ; Vinodkumar, R. ; Detty, A.P. ; Chalana, S.R. ; Navas, I. ; Pillai, V. P. Mahadevan
Author_Institution :
Dept. of Optoelectron., Univ. of Kerala, Thiruvananthapuram, India
Abstract :
Nanostructured tin oxide (SnO2) thin films are prepared by pulsed laser deposition technique and the films are annealed at different temperatures viz. 300, 400, 500 and 600°C. The as-deposited and annealed films are characterized by X-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, UV-visible spectroscopy and photoluminescence spectroscopy. The films annealed at higher temperature exhibit more intense and sharper X-ray diffraction peaks compared to other annealed films showing their enhanced crystallinity. Raman spectra of nanocrystalline tin oxide exhibits very broad spectral feature extending from 400- 700 cm-1. All the films exhibit a broad luminescence band centered on 376 nm and a blue emission at 450 and 470 nm.
Keywords :
Raman spectra; X-ray diffraction; annealing; atomic force microscopy; nanostructured materials; optical films; photoluminescence; semiconductor thin films; tin compounds; ultraviolet spectra; visible spectra; wide band gap semiconductors; SnO2; UV-visible spectroscopy; X-ray diffraction; annealing; atomic force microscopy; blue emission; direct wide band gap n-type semiconductor; film crystallinity; laser ablated nanostructured tin oxide thin film; luminescence band; microRaman spectroscopy; nanocrystalline tin oxide; optoelectronic device applications; photoluminescence spectroscopy; pulsed laser deposition; temperature 300 degC to 600 degC; Annealing; Atomic force microscopy; Nanoscale devices; Optoelectronic devices; Pulsed laser deposition; Spectroscopy; Temperature; Thin film devices; Tin; X-ray diffraction; Micro Raman Spectra; Photoluminescence; Pulsed laser deposition; UV-visible spectroscopy; nanostructured SnO2 films;
Conference_Titel :
Ultra Modern Telecommunications & Workshops, 2009. ICUMT '09. International Conference on
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4244-3942-3
Electronic_ISBN :
978-1-4244-3941-6
DOI :
10.1109/ICUMT.2009.5345557