Title :
Laser ablated nanostructured zinc sulphide thin films for optoelectronics device applications
Author :
Chalana, S.R. ; Vinodkumar, R. ; Detty, A.P. ; Navas, I. ; Sreedevi, K.S. ; Pillai, V. P Mahadevan
Author_Institution :
Dept. of Optoelectron., Univ. of Kerala, Thiruvananthapuram, India
Abstract :
ZnS thin films are prepared by pulsed laser deposition and the effect of annealing temperature on the structural and optical properties of ZnS films is investigated systematically using techniques like X-ray diffraction (XRD), Atomic force microscopy (AFM), UV-VIS spectroscopy and Photoluminescence spectroscopy (PL). The XRD pattern of the film annealed at 600°C show a less intense XRD peak of hexagonal ZnO. In the photoluminescence spectra, an orange emission is observed for the films with 325 nm excitation.
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; nanostructured materials; nanotechnology; photoluminescence; pulsed laser deposition; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; UV-VIS spectroscopy; X-ray diffraction; XRD; ZnS; annealing; atomic force microscopy; laser ablation; nanostructured thin films; optical properties; orange emission; photoluminescence spectroscopy; pulsed laser deposition; structural properties; temperature 600 degC; wavelength 325 nm; Annealing; Atom optics; Nanoscale devices; Optical films; Optoelectronic devices; Pulsed laser deposition; Thin film devices; X-ray lasers; X-ray scattering; Zinc compounds; nanostructured zinc sulphide thin films; pulsed laser deposition; quantum confinement effect;
Conference_Titel :
Ultra Modern Telecommunications & Workshops, 2009. ICUMT '09. International Conference on
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4244-3942-3
Electronic_ISBN :
978-1-4244-3941-6
DOI :
10.1109/ICUMT.2009.5345562
