Title :
An examination of the `tunnel junctions´ in triple junction a-Si:H based solar cells: modeling and effects on performance
Author :
Hou, J.Y. ; Arch, J.K. ; Fonash, S.J. ; Wiedeman, S. ; Bennett, M.
Author_Institution :
Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA
Abstract :
The first-principles computer model AMPS is used to model multijunction solar cell performance. The specific cell modeled uses two a-Si:H absorber layers and an a-SiGe:H absorber layer with all a-SiC:H p + layers and all a-Si:H n+ layers, the modeling shows the contacts in these cells depend critically on recombination in x-layers which may be independently present or, in a well-designed cell, purposefully present. These x-layers must be supplied with carriers. This process may be optimized by appropriate bandgap grading. The modeling shows that multijunction contact layers-unless fully optimized-are not simply resistor-like or diode-like in their behavior
Keywords :
amorphous semiconductors; electronic engineering computing; elemental semiconductors; hydrogen; semiconductor device models; silicon; solar cells; amorphous Si:H solar cells; analysis of microelectronic and photonic structures; bandgap grading; computer model AMPS; multijunction solar cell performance; semiconductor; triple junction solar cells; tunnel junctions; Computer simulation; Heterojunctions; PIN photodiodes; Photonic band gap; Photovoltaic cells; Poisson equations; Schottky diodes; Sprites (computer); Tail; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169410