1.3 µm dilute nitride HELLISH-VCSOAs

Author

Chaqmaqchee, F. ; Mazzucato, S. ; Balkan, N.

Author_Institution

Sch. of Comput. Sci. & Electron. Eng., Univ. of Essex, Colchester, UK

fYear

2011

fDate

26-30 June 2011

Firstpage

1

Lastpage

3

Abstract

The operational characterisation of Hot Electron Light Emitting and Lasing in Semiconductor Heterojunction (HELLISH) vertical cavity semiconductor optical amplifier (VCSOA) is reported. The device is designed for 1.3 μm operation and based on Ga_0.35In_0.65N_0.02As_0.08/GaAs multiple quantum wells (MQWs), is assessed using spectral photoluminescence (PL), electroluminescence (EL) and spectral electro-photoluminescence (EPL) techniques under different optical and electrical excitation conditions. Significant amplification of the emitted signal is reported.

Keywords

III-V semiconductors; electroluminescence; gallium arsenide; gallium compounds; indium compounds; optical design techniques; photoluminescence; quantum well lasers; semiconductor heterojunctions; semiconductor optical amplifiers; semiconductor quantum wells; surface emitting lasers; Ga_0.35In_0.65N_0.02As_0.08-GaAs; dilute nitride HELLISH-VCSOA; electrical excitation; electroluminescence; hot electron light emitting; lasing; multiple quantum wells; optical excitation; semiconductor heterojunction; spectral photoluminescence; vertical cavity semiconductor optical amplifier; wavelength 1.3 mum; Cavity resonators; Electric fields; Laser tuning; Measurement by laser beam; Power lasers; Temperature measurement; Vertical cavity surface emitting lasers; EL; EPL; GaInNAs; Hellish VCSOA; PL; amplification;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2011 13th International Conference on

Conference_Location

Stockholm

ISSN

2161-2056

Print_ISBN

978-1-4577-0881-7

Electronic_ISBN

2161-2056

Type

conf

DOI

10.1109/ICTON.2011.5971028

Filename

5971028