Title :
1.3 µm dilute nitride HELLISH-VCSOAs
Author :
Chaqmaqchee, F. ; Mazzucato, S. ; Balkan, N.
Author_Institution :
Sch. of Comput. Sci. & Electron. Eng., Univ. of Essex, Colchester, UK
Abstract :
The operational characterisation of Hot Electron Light Emitting and Lasing in Semiconductor Heterojunction (HELLISH) vertical cavity semiconductor optical amplifier (VCSOA) is reported. The device is designed for 1.3 μm operation and based on Ga0.35In0.65N0.02As0.08/GaAs multiple quantum wells (MQWs), is assessed using spectral photoluminescence (PL), electroluminescence (EL) and spectral electro-photoluminescence (EPL) techniques under different optical and electrical excitation conditions. Significant amplification of the emitted signal is reported.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; gallium compounds; indium compounds; optical design techniques; photoluminescence; quantum well lasers; semiconductor heterojunctions; semiconductor optical amplifiers; semiconductor quantum wells; surface emitting lasers; Ga0.35In0.65N0.02As0.08-GaAs; dilute nitride HELLISH-VCSOA; electrical excitation; electroluminescence; hot electron light emitting; lasing; multiple quantum wells; optical excitation; semiconductor heterojunction; spectral photoluminescence; vertical cavity semiconductor optical amplifier; wavelength 1.3 mum; Cavity resonators; Electric fields; Laser tuning; Measurement by laser beam; Power lasers; Temperature measurement; Vertical cavity surface emitting lasers; EL; EPL; GaInNAs; Hellish VCSOA; PL; amplification;
Conference_Titel :
Transparent Optical Networks (ICTON), 2011 13th International Conference on
Conference_Location :
Stockholm
Print_ISBN :
978-1-4577-0881-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2011.5971028
