Title :
Analytical modelling of thin amorphous silicon-germanium solar cells
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
The a-SiGe:H material parameters pertinent to the operation of the red scavenging component of a multijunction solar cell are explored. Analytical modeling of p-i-n graded a-SiGe:H, a-Si:H solar cells is used to probe the relative minority carrier transport. These results are compared to film measurements including photo and dark conductivity as well as to capacitance measurements. The primary result is that the electron lifetime in a-SiGe:H is significantly longer than previously thought. This multifaceted analysis suggests directions for the attainment of efficient silicon-germanium devices
Keywords :
Ge-Si alloys; amorphous semiconductors; capacitance measurement; carrier lifetime; electrical conductivity measurement; hydrogen; minority carriers; semiconductor device models; semiconductor materials; semiconductor thin films; solar cells; amorphous SiGe:H solar cells; analytical modeling; capacitance measurements; dark conductivity; electron lifetime; multijunction solar cell; photoconductivity; Amorphous materials; Analytical models; Capacitance measurement; Conducting materials; Conductive films; Germanium silicon alloys; PIN photodiodes; Photovoltaic cells; Probes; Silicon germanium;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169411
