Title :
Non-equilibrium Charge Carriers Life Times in Semi-Insulating GaAs Compensated with Chromium
Author :
Zarubin, Andrey N. ; Mokeev, Dmitry Y. ; Okaevich, Lyudmila S. ; Tyazhev, Anton V. ; Bimatov, Mikhail V. ; Lelekov, Mikhail A. ; Ponomarev, Ivan V.
Author_Institution :
Siberian Physics-Technical Institute, Tomsk, Russia
Abstract :
In activity the observed data of a life time of non-equilibrium charge carriers in detectors based on GaAs, compensated with Cr are shown On the basis of the analysis of experimental data is established, that in electrical fields with strength in range from 1 to 10 kV/s the values of non-equilibrium electrons and holes life times do not depend on electric field strength It is shown, that using of two miscellaneous techniques results in considerable difference in values of a nonequilibrium holes life time, while the life times of electrons have comparable values.
Keywords :
III-V semiconductors; X-ray detection; X-ray imaging; chromium; gallium arsenide; image sensors; semiconductor devices; Cr; GaAs; X-ray detection; chromium; nonequilibrium charge carrier; nonequilibrium electrons; radiation imaging detector; semi-insulating gallium arsenide; semiconductor detectors; Charge carrier processes; Charge carriers; Chromium; Gallium arsenide; Ionizing radiation; Radiation detectors; Radiography; Semiconductor radiation detectors; X-ray detection; X-ray detectors; GaAs; X-ray; radiation imaging detector;
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Novosibirsk, Russia
Print_ISBN :
5-7782-0646-1
DOI :
10.1109/SIBEDM.2006.231988
