DocumentCode
2561829
Title
Integrated Porous Silicon Nano-Explosive Devices
Author
Du Plessis, Monuko
Author_Institution
Dept. of Electr., Electron. & Comput. Eng., Pretoria Univ.
fYear
2006
fDate
1-5 July 2006
Firstpage
6
Lastpage
13
Abstract
The explosive properties of porous-silicon, impregnated with an oxidant, were researched. A porous layer structural model is proposed to model the pore and crystallite dimensions as a result of the electrochemical etching of porous silicon layers. A gravimetric experimental technique is described whereby the pore dimensions and specific surface area of porous regions can be determined, resulting in a new relationship between pore size and specific surface area. The properties of different oxidants, were investigated. The filling of the pores by the oxidant is a strong function of pore size and the type of oxidant used. The experimentally observed nano-explosive figure of merit (FOM) is a function of the effective surface area in the porous region covered by the oxidant. It was found that there is an optimum pore size for the most energetic explosion. Future applications for this new technology are proposed
Keywords
etching; explosions; nanocomposites; nanoelectronics; nanoporous materials; porous semiconductors; silicon; Si; crystallite dimension; electrochemical etching; gravimetric experimental technique; nano-explosive device; oxidant; pore dimension; porous silicon; specific surface area; Atomic layer deposition; Etching; Ethanol; Explosives; Hafnium; Hydrogen; Nanoscale devices; Silicon; Temperature; Vacuum systems; Nano-explosion; porous silicon; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location
Erlagol, Altai
ISSN
1815-3712
Print_ISBN
5-7782-0646-1
Type
conf
DOI
10.1109/SIBEDM.2006.231990
Filename
1694124
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