• DocumentCode
    2561854
  • Title

    Developments of Non-Volatile Memory

  • Author

    Panov, Ivan V. ; Kalinin, Sergey V.

  • Author_Institution
    Siberian State Univ. of Telecommun. & Informatics, Novosibirsk
  • fYear
    2006
  • fDate
    1-5 July 2006
  • Firstpage
    15
  • Lastpage
    17
  • Abstract
    The article contains the information about the most perspective technologies in area of non-volatile memory: flash memory, SONOS structures, high K structures, FRAM, MRAM, NRAM, OUM
  • Keywords
    ferroelectric storage; flash memories; magnetoresistive devices; nanotube devices; random-access storage; FRAM; MRAM; NRAM; OUM; SONOS structures; Si-SiO2-Si3N4-SiO2-Si; ferroelectric memory; flash memory; high K structures; magneto-resistive random access memory; nanotube random access memory; nonvolatile memory; ovonic unified memory; Amorphous materials; Ferroelectric films; High K dielectric materials; High-K gate dielectrics; Magnetic field measurement; Nanotubes; Nonvolatile memory; Random access memory; SONOS devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
  • Conference_Location
    Erlagol, Altai
  • ISSN
    1815-3712
  • Print_ISBN
    5-7782-0646-1
  • Type

    conf

  • DOI
    10.1109/SIBEDM.2006.231992
  • Filename
    1694126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2561854