DocumentCode :
2561856
Title :
Influence of amorphization depth on sheet resistance in shallow junction formation with B cluster implantation
Author :
Kawasaki, Yoji ; Maruyama, Yoshiki ; Yoshimura, Hidefumi ; Miyatake, Hiroshi ; Shibahara, Kentaro
Author_Institution :
Renesas Technol. Corp., Itami, Japan
fYear :
2009
fDate :
11-12 June 2009
Firstpage :
31
Lastpage :
33
Abstract :
The authors have examined the influence of the amorphous layer on sheet resistance (Rs) utilizing B18HX + and its dimer implantation. Because of partial decomposition of B18H22 in an ion source chamber, the extracted ion beam consists of a lot of kinds of B18HX + ions. In addition, as a result of polymerization, the dimer of B18HX + ions are also included. Deeper amorphization is expected for the dimer implantation, because it is reported that the dimer ion of As formed the thicker amorphized layer than that of monomer.
Keywords :
amorphisation; amorphous semiconductors; boron; electrical resistivity; elemental semiconductors; ion implantation; semiconductor junctions; silicon; B cluster implantation; B18HX +; Si:B; amorphization depth; shallow junction formation; sheet resistance; Amorphous materials; Annealing; Atomic measurements; Boron; Ellipsometry; Ion beams; Ion sources; Particle beam optics; Spectroscopy; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
Type :
conf
DOI :
10.1109/IWJT.2009.5166212
Filename :
5166212
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2561856
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