Growth mechanism of epitaxial NiSi2 in atomic-scale for Schottky source/drain in Silicon Nanowire transistors

Author

Migita, S. ; Morita, Y. ; Taoka, N. ; Mizubayashi, W. ; Ota, H.

Author_Institution

Nanodevice Innovation Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2009

fDate

11-12 June 2009

Firstpage

38

Lastpage

39

Abstract

Silicon nanowire (SNW) field effect transistors (FET) which consist of silicon nanowire channels with less than 10 nm diameters and gate-all-around structures are targeted as future CMOS devices. This paper presents the atomic-scale understanding of epitaxial NiSi₂ growth and discusses its contribution to silicidation of SNWs.

Keywords

Schottky gate field effect transistors; elemental semiconductors; epitaxial growth; nanoelectronics; nanowires; nickel alloys; semiconductor epitaxial layers; semiconductor materials; silicon; silicon alloys; NiSi₂; Schottky source/drain; atomic-scale; epitaxial growth mechanism; field effect transistors; lattice matching; mechanical properties; nickel silicide phases; parasitic resistances; silicidation process; silicon nanowire transistors; Atomic layer deposition; Atomic measurements; FETs; Nanoscale devices; Nickel; Nitrogen; Silicidation; Silicides; Silicon compounds; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2009. IWJT 2009. International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3319-3

Electronic_ISBN

978-1-4244-3320-9

Type

conf

DOI

10.1109/IWJT.2009.5166214

Filename

5166214