Title :
Growth mechanism of epitaxial NiSi2 in atomic-scale for Schottky source/drain in Silicon Nanowire transistors
Author :
Migita, S. ; Morita, Y. ; Taoka, N. ; Mizubayashi, W. ; Ota, H.
Author_Institution :
Nanodevice Innovation Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Silicon nanowire (SNW) field effect transistors (FET) which consist of silicon nanowire channels with less than 10 nm diameters and gate-all-around structures are targeted as future CMOS devices. This paper presents the atomic-scale understanding of epitaxial NiSi2 growth and discusses its contribution to silicidation of SNWs.
Keywords :
Schottky gate field effect transistors; elemental semiconductors; epitaxial growth; nanoelectronics; nanowires; nickel alloys; semiconductor epitaxial layers; semiconductor materials; silicon; silicon alloys; NiSi2; Schottky source/drain; atomic-scale; epitaxial growth mechanism; field effect transistors; lattice matching; mechanical properties; nickel silicide phases; parasitic resistances; silicidation process; silicon nanowire transistors; Atomic layer deposition; Atomic measurements; FETs; Nanoscale devices; Nickel; Nitrogen; Silicidation; Silicides; Silicon compounds; Temperature;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166214
