Title :
Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts
Author :
Nakatsuka, Osamu ; Akimoto, Shingo ; Nishimura, Tsuyoshi ; Zaima, Shigeaki
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ., Chikusa, Japan
Abstract :
This paper investigated the influence of the interfacial structure on electrical properties of metal/n-Ge Schottky contacts. The native oxide on Ge surface is not the origin of Fermi level pinning (FLP) and the interfacial reaction between metal and Ge probably caused FLP. The introduction of Si inter layer was not effective to resolve the FLP of metal/Ge contacts. It is important to investigate the reaction and the crystalline structure at metal/Ge interfaces with atomic scale in detail to understand the FLP in the future.
Keywords :
Schottky barriers; electric properties; elemental semiconductors; germanium; interface structure; semiconductor-metal boundaries; Ge; crystalline structure; electrical properties; interfacial structure; metal-n-Ge Schottky contacts; Chemicals; Contacts; Electrons; Erbium; MOSFET circuits; Schottky barriers; Substrates; Surface cleaning; Temperature measurement; Zirconium;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166215
