Title :
A comparative study of double gate MOSFET with asymmetric barrier heights at source/drain and the symmetric DG-SBFET
Author :
Xiong-Xiong, Du ; Sun Lei ; Xiao-yan, Liu ; Han Ru-Qi
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
Double gate SBFET with asymmetric barrier heights at source/drain and the symmetric DG-SBFET are simulated. A comparative study between them is made. We have found that the DG-ASBFET is more appropriate for LOP and LSPT applications. Furthermore, the DG-ASBFET shows a better scale ability and better immunity to the short channel effects.
Keywords :
MOSFET; Schottky barriers; Schottky barrier source/drain MOSFET; asymmetric barrier heights; double gate MOSFET; low operating power; low standby power technology; metal oxide semiconductor field effect transistor; short channel effects; symmetric DG-SBFET; CMOS technology; Electrodes; Electrons; Fabrication; MOSFET circuits; Microelectronics; Schottky barriers; Semiconductor device doping; Silicides; Silicon;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166217
