Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

Author

Bersani, M. ; Pepponi, G. ; Giubertoni, D. ; Gennaro, S. ; Sahiner, M.A. ; Kelty, S.P. ; Kah, M. ; Kirkby, K.J. ; Doherty, R. ; Foad, M.A. ; Meirer, F. ; Streli, C. ; Woicik, J.C. ; Pianetta, P.

Author_Institution

Fondazione Bruno Kessler, Center for Mater. & Microsyst.-Irst, Trento, Italy

fYear

2009

fDate

11-12 June 2009

Firstpage

64

Lastpage

68

Abstract

In this work, studies carried out with several techniques on As junctions activated by solid phase epitaxial regrowth (SPER), rapid thermal process (RTP) spike annealing and laser sub-melt annealing (LA) are summarized. In particular, the sheet resistance (R_s) values and Hall effect measured active carrier doses are interpreted after investigation by secondary ion mass spectrometry (SIMS) and extended x-ray absorption fine structure (EXAFS).

Keywords

EXAFS; Hall effect; arsenic; electrical resistivity; elemental semiconductors; ion implantation; laser beam annealing; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor junctions; silicon; solid phase epitaxial growth; As junctions; EXAFS; Hall effect; RTP; SIMS; SPER; Si:As; active carrier doses; extended X-ray absorption fine structure; junction activation; junction deactivation; laser annealing; laser sub-melt annealing; nonequilibrium annealing; rapid thermal process spike annealing; secondary ion mass spectrometry; sheet resistance; solid phase epitaxy; ultra shallow junctions; Electrical resistance measurement; Electromagnetic wave absorption; Epitaxial growth; Hall effect; Mass spectroscopy; Particle measurements; Rapid thermal annealing; Rapid thermal processing; Solid lasers; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2009. IWJT 2009. International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3319-3

Electronic_ISBN

978-1-4244-3320-9

Type

conf

DOI

10.1109/IWJT.2009.5166221

Filename

5166221