DocumentCode
2562050
Title
Impact of defects on the performance of high efficiency 12"×13" a-Si based triple junction modules
Author
Bennett, M. ; Newton, J. ; Poplawski, C. ; Rajan, K.
Author_Institution
Solarex Corp., Newtown, PA, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
1281
Abstract
Triple-junction a-Si-based photovoltaic modules (900 cm2) with initial conversion efficiencies between 9% and 10% have been made. Often, however, the efficiency of these modules is lowered by the effects of shunts. More surprisingly, the shunts can cause an increase in the rate of degradation due to light exposure. The shunts seem to be related to debris which is formed during the deposition of the conducting oxide on the glass substrate. Techniques by which these effects can be minimized are presented
Keywords
amorphous semiconductors; crystal defects; elemental semiconductors; silicon; solar cells; 9 to 10 percent; amorphous Si solar cells; conducting oxide; defects; degradation; glass substrate; light exposure; semiconductor; shunts; triple junction modules; Glass; Photovoltaic systems; Semiconductor thin films; Solar power generation; Stability; Substrates; Sun; Testing; Thermal degradation; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169414
Filename
169414
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