Electron holography for 2-D dopant profiling

Author

Gribelyuk, Michael A. ; Yuan, Jun ; Gluschenkov, Oleg ; Ronsheim, Paul ; Shang, Huiling

Author_Institution

IBM Syst. & Technol. Group, Semicond. R&D Center, Hopewell Junction, NY, USA

fYear

2009

fDate

11-12 June 2009

Firstpage

69

Lastpage

73

Abstract

We have demonstrated that off-axis holography can be realized in TEM and applied to 2-D quantitative analysis of p-n junctions in submicron devices. Examples of the recent work showed that millisecond laser anneal does not cause lateral diffusion of As extension implant in n-FET devices. The reduction of potential variation across depletion region in n-FET devices with carbon co-implant was directly observed. In combination with the SIMS data it is attributed to suppression of boron halo diffusion. The short channel device characteristics can be improved if carbon co-implant is used.

Keywords

doping profiles; electron holography; p-n junctions; transmission electron microscopy; 2D dopant profiling; SIMS data; TEM; boron halo diffusion; carbon co-implant; electron holography; millisecond laser anneal; n-FET devices; off-axis holography; p-n junctions; short channel device characteristics; submicron devices; transmission electron microscope; Electron optics; Holographic optical components; Holography; Image reconstruction; Interference; Lenses; Optical recording; Optical scattering; Transmission electron microscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2009. IWJT 2009. International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3319-3

Electronic_ISBN

978-1-4244-3320-9

Type

conf

DOI

10.1109/IWJT.2009.5166222

Filename

5166222