Title :
Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films
Author :
Shing, Y.H. ; Pool, F.S. ; Essick, J.M.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2×106 with a photoconductivity of 10-5 to 10-4 (Ω-cm)-1, (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2×1016 (cm)-3 determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2 (Ω-cm)-1
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; plasma deposited coatings; semiconductor thin films; silicon; silicon compounds; solar cells; ECR-deposited films; Tauc gap; Urbach slope; amorphous Si:H solar cells; amorphous SiC:H solar cells; constant photocurrent method; device evaluations; electron cyclotron resonance microwave plasmas; integrated defect density; junction capacitance measurements; material properties; photoconductivity; photosensitive films; semiconductor; Capacitance measurement; Cyclotrons; Electrons; Material properties; Microwave devices; Photoconductivity; Plasma devices; Plasma materials processing; Plasma properties; Resonance;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169418
