Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

Author

Shing, Y.H. ; Pool, F.S. ; Essick, J.M.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1302

Abstract

Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH₄, CH₄, and H₂ mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2×10⁶ with a photoconductivity of 10^-5 to 10^-4 (Ω-cm)^-1, (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2×10¹⁶ (cm)^-3 determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2 (Ω-cm)^-1

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; plasma deposited coatings; semiconductor thin films; silicon; silicon compounds; solar cells; ECR-deposited films; Tauc gap; Urbach slope; amorphous Si:H solar cells; amorphous SiC:H solar cells; constant photocurrent method; device evaluations; electron cyclotron resonance microwave plasmas; integrated defect density; junction capacitance measurements; material properties; photoconductivity; photosensitive films; semiconductor; Capacitance measurement; Cyclotrons; Electrons; Material properties; Microwave devices; Photoconductivity; Plasma devices; Plasma materials processing; Plasma properties; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169418

Filename

169418