DocumentCode :
2562136
Title :
Performance and modeling of amorphous silicon solar cells soaked at high light intensity
Author :
Wagner, S. ; Xu, X. ; Li, X.R. ; Shen, D.S. ; Isomura, M. ; Bennett, M. ; Delahoy, A.E. ; Li, X. ; Arch, J.K. ; Nicque, J.-L. ; Fonash, S.J.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
1307
Abstract :
Pin solar cells were aged under high-intensity illumination at 60°C, well into saturation of their conversion efficiency. The cell characteristics were measured at intervals and were modeled numerically with a quantitative optoelectronic model. The i-layer defect density was measured separately. The results of the model agree well with the experimentally determined light-soaking dependent solar cell performance up to saturation. Saturation is reached at a time estimated to be equivalent to real-life operation of ~20 years. The agreement suggests that the light-induced defects in the bulk of the i-layer control the light-induced degradation of pin cells
Keywords :
ageing; amorphous semiconductors; elemental semiconductors; semiconductor device models; silicon; solar cells; aging; amorphous Si solar cells; cell characteristics; conversion efficiency; high-intensity illumination; i-layer control; i-layer defect density; light-induced defects; light-soaking dependent solar cell performance; pin solar cells; quantitative optoelectronic model; real-life operation; saturation; semiconductor; Acceleration; Aging; Amorphous silicon; Degradation; Density measurement; Lighting; Photovoltaic cells; Photovoltaic systems; Sun; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169419
Filename :
169419
Link To Document :
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