Title :
Plasma Doping for 3D and 2D devices
Author_Institution :
Ultimate Junction Technol. Inc., Moriguchi, Japan
Abstract :
Self-Regulation Plasma Doping (SRPD) with B2H6/Helium gas plasma has been developed to provide precisely controllable ultra-shallow junctions for planar FET and conformal junctions for fins in the same time. Manufacturing level of process controllability (<1% on dose) and advantage on the devices of SRPD has been achieved with FinFETs and planar pMOSFETs.
Keywords :
MOSFET; plasma materials processing; semiconductor doping; semiconductor junctions; 2D devices; 3D devices; conformal junctions; controllable ultra-shallow junctions; gas plasma; planar FET; process controllability; self-regulation plasma doping; Atomic layer deposition; Boron; Conductivity; Controllability; Doping; FETs; Helium; Plasma devices; Plasma immersion ion implantation; Plasma materials processing;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166227
