Title :
Recent advance in single-ion implantation method for single-dopant devices
Author :
Shinada, Takahiro ; Hori, Masahiro ; Taira, Keigo ; Endoh, Tetsuo ; Ohdomari, Iwao
Author_Institution :
Waseda Inst. for Adv. Study (WIAS), Japan
Abstract :
The reliable detection and control of single-ion incidence opens up the possibilities both for future nanoscale semiconductor devices for single-atom devices that employ single atoms to store or manipulate information. We have fabricated semiconductors with various ordered distributions of dopant atoms, which are compared with existing semiconductors that have a random arrangement of dopant atoms and evaluated the influence of discrete dopant atom distribution on its electrical properties and its dependence on the channel length. The anticipated results will provide the knowledge regarding impurity distribution beneficial for channel engineering of nanodevices.
Keywords :
doping profiles; focused ion beam technology; impurity distribution; ion implantation; semiconductor doping; dopant distributions; semiconductor doping; single dopant atoms; single-dopant devices; single-ion implantation method; Apertures; Electron emission; Fluctuations; Nanoscale devices; Quantum computing; Semiconductor device doping; Semiconductor devices; Semiconductor impurities; Silicon; Substrates;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166228
