Title :
Vth control by halo implantation using the SEN´s MIND system
Author :
Ninomiya, S. ; Kimura, Y. ; Kudo, T. ; Ochi, A. ; Sato, F. ; Tsukihara, M. ; Fuse, G. ; Sugitani, M. ; Tada, K. ; Kamiyanagi, H. ; Shibata, S.
Author_Institution :
SEN Corp., Saijo, Japan
Abstract :
For improvement of device yield within a wafer, SEN\´s MIND system is powerful tool. It is found that one can compensate variations from other manufacturing processes of semiconductor devices and can fabricate the "same" semiconductor devices using the MIND system. "Different dose" ion implantation processes are intentionally given on one wafer by using SEN\´s MIND system. In this paper, it is reported that the threshold voltage is controlled by large-tilted halo implantation and large-tilted lightly doped drain (LDD) implantation using the SEN\´s MIND system. It is shown that the MIND system makes yields of semiconductor devices much better.
Keywords :
integrated circuit yield; ion implantation; semiconductor device manufacture; SEN MIND system; device yield improvement; halo implantation; ion implantation; manufacturing process; mapping of intentional nonuniform dosage system; semiconductor device; threshold voltage control; Control systems; Electric variables; Fuses; Ion implantation; Plasma devices; Plasma immersion ion implantation; Production; Productivity; Semiconductor devices; Threshold voltage;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166229
