DocumentCode
2562211
Title
The bias dependent spectral response of a-Si:H solar cells
Author
Bruns, J. ; Gall, S. ; Wagemann, H.G.
Author_Institution
Inst. fur Werkstoffe der Elektrotech., Tech. Univ. Berlin, Germany
fYear
1991
fDate
7-11 Oct 1991
Firstpage
1323
Abstract
Two different types of solar cells with a pin and a nip structure have been investigated experimentally in the annealed state and in the degraded state. A numerical model is used to simulate the different spectral behavior of both types of solar cells with a single set of parameters. A comparison between experimentally obtained and simulated spectral characteristics provides information about the current components and the spatial distribution of localized states within the device. Light degradation affects both the volume and the pi-interface region
Keywords
amorphous semiconductors; elemental semiconductors; hydrogen; silicon; solar cells; amorphous Si:H solar cells; annealed state; bias dependent spectral response; current components; degraded state; light degradation; nip structure; pin structure; semiconductor; Bonding; Charge carrier processes; Degradation; Electron mobility; Electron traps; Lighting; Numerical simulation; Optical filters; Photovoltaic cells; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169422
Filename
169422
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