DocumentCode :
2562246
Title :
Anomalous amorphization resistance of Ge against 11B+ implantation
Author :
Shibahara, Kentaro ; Osada, Kosei
Author_Institution :
Res. Inst. for Nanodevices & Bio Syst., Hiroshima Univ., Higashi-Hiroshima, Japan
fYear :
2009
fDate :
11-12 June 2009
Firstpage :
104
Lastpage :
105
Abstract :
Summary form only given. High dose, up to 3x10 cm16 , B+ implantation into Ge was carried out to find the critical amorphization dose. Although a highly disordered layer was observed in specimens, amorphization did not occur. The multiple vacancy complex is a possible candidate to explain such hardness against amorphization.
Keywords :
amorphisation; boron; elemental semiconductors; germanium; ion beam effects; ion implantation; radiation hardening (electronics); vacancies (crystal); Ge:B; anomalous amorphization resistance; boron ion implantation; critical amorphization dose; multiple vacancy complex; radiation hardness; Absorption; Amorphous materials; Crystallization; Educational technology; Ellipsometry; Heating; Immune system; Refractive index; Spectroscopy; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
Type :
conf
DOI :
10.1109/IWJT.2009.5166230
Filename :
5166230
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2562246
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