Title :
Effects of helium dilution on glow discharge depositions of a-Si 1-xGex:H alloys
Author :
Tsuo, Y.S. ; Xu, Y. ; Balberg, I. ; Crandall, Richard S.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
A study is made of the effects of helium feed gas dilution on the properties of a-Si1-xGex:H alloys deposited using radio-frequency glow discharge decomposition of silane and germane gas mixtures. Comparing a-Si1-xGex:H films deposited using 65% helium dilution with films deposited using 65% hydrogen dilution, it is found that films deposited with helium dilution have a longer charge carrier diffusion length and higher quantum efficiency-mobility-lifetime product values. It is also found that the incorporation of Ge atoms in the a-Si1-xGex:H film is more efficient with helium dilution than with hydrogen dilution
Keywords :
CVD coatings; Ge-Si alloys; amorphous semiconductors; glow discharges; hydrogen; solar cells; He dilution; amorphous Si1-xGex:H solar cells; charge carrier diffusion length; glow discharge depositions; quantum efficiency-mobility-lifetime; Etching; Feeds; Germanium alloys; Glow discharges; Helium; Hydrogen; Microstructure; Plasma applications; Plasma properties; Radio frequency;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169424
