Title :
Properties and stability of a-Si:H films by alternately repeating deposition and hydrogen plasma treatment
Author :
Ashida, Y. ; Koyama, M. ; Miyachi, K. ; Tanaka, H. ; Fukuda, N. ; Nitta, A.
Author_Institution :
Mitsui Toatsu Chem. Inc., Yokohama, Japan
Abstract :
The novel deposition method of alternately repeating deposition and hydrogen plasma treatment was investigated to obtain high-quality, stable a-Si:H films. It was found that the film properties were strongly dependent on the thickness deposited in each repeating cycle. The optical bandgap and hydrogen content were controlled by changing the thickness in the each repeating cycle. The light soak degradation of these films was smaller than that of the conventional films
Keywords :
amorphous semiconductors; elemental semiconductors; energy gap; hydrogen; optical constants; plasma deposition; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; Si:H; amorphous semiconductor thin films; deposition; hydrogen content; hydrogen plasma treatment; light soak degradation; optical bandgap; quality; stability; thickness; Degradation; Glow discharges; Hydrogen; Optical films; Optical scattering; Photonic band gap; Photovoltaic cells; Plasma chemistry; Plasma properties; Plasma stability;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169428
