Distributed millimeter-wave InGaAs metal-semiconductor-metal photodetector

Author

Droge, E. ; Bottcher, E.H. ; Kollakowski, St. ; Strittmatter, A. ; Reimann, O. ; Steingruber, R. ; Umbach, A. ; Bimberg, D.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

fYear

1998

fDate

12-14 Oct. 1998

Firstpage

173

Lastpage

176

Abstract

A 78-GHz traveling-wave photodetector for the long-wavelength range has been realized by periodically distributing four InGaAs-InP metal-semiconductor-metal detectors with sub-half-micrometer feature size electrodes on top of an InAlGaAs-core optical waveguide.

Keywords

III-V semiconductors; coplanar transmission lines; gallium arsenide; indium compounds; metal-semiconductor-metal structures; microwave photonics; optical waveguides; photodetectors; strip lines; 78 GHz; GHz traveling-wave photodetector; InAlGaAs; InAlGaAs-core optical waveguide; InGaAs-InP; InGaAs-InP metal-semiconductor-metal detectors; distributed millimeter-wave InGaAs metal-semiconductor-metal photodetector; long-wavelength range; periodically distributing; sub-half-micrometer feature size electrodes; Bandwidth; Detectors; Electrodes; Indium gallium arsenide; Millimeter wave technology; Optical mixing; Optical waveguides; Photoconductivity; Photodetectors; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1998. MWP '98. International Topical Meeting on

Conference_Location

Princeton, NJ, USA

Print_ISBN

0-7803-4936-9

Type

conf

DOI

10.1109/MWP.1998.745656

Filename

745656