Study of damage accumulation and annealing process at low energy boron implantation using molecular dynamics simulations

Damage accumulation and annihilation processes with low-energy boron implantation were studied by molecular dynamics (MD) simulation. The MD simulation of B atom accelerated with 500 eV iteratively implanted into Si(100) target showed that the number of interstitial Si atom saturates at about 1 times 10¹⁵/cm² of B atomic dose. The results at several implant doses are annealed for about 4ns. When the B implanted dose is as low as 1 times or 2 times 10¹⁴/cm², the annealing simulations showed the re-crystallization of surface damage at 1800 K and 2200 K. However, very slow re-crystallization ratio was observed at the implant dose of more than 1 times 10¹⁵/cm².