Title :
Study of damage accumulation and annealing process at low energy boron implantation using molecular dynamics simulations
Author :
Aoki, Takaaki ; Matsuo, Jiro
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
Damage accumulation and annihilation processes with low-energy boron implantation were studied by molecular dynamics (MD) simulation. The MD simulation of B atom accelerated with 500 eV iteratively implanted into Si(100) target showed that the number of interstitial Si atom saturates at about 1 times 1015/cm2 of B atomic dose. The results at several implant doses are annealed for about 4ns. When the B implanted dose is as low as 1 times or 2 times 1014/cm2, the annealing simulations showed the re-crystallization of surface damage at 1800 K and 2200 K. However, very slow re-crystallization ratio was observed at the implant dose of more than 1 times 1015/cm2.
Keywords :
annealing; boron; elemental semiconductors; interstitials; ion implantation; molecular dynamics method; recrystallisation; silicon; Si:B; annealing simulations; low energy boron implantation; molecular dynamics simulations; surface damage recrystallisation; temperature 1800 K to 2200 K; Acceleration; Boron; Computational modeling; Computer simulation; Doping; Implants; Ion implantation; Lattices; Power engineering and energy; Simulated annealing;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166237