1.55 /spl mu/m absorption, high speed, high saturation power p-i-n photodetectors using low-temperature grown GaAs

Author

Chiu, Y.J. ; Zhang, S.Z. ; Bowers, John E. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1998

fDate

12-14 Oct. 1998

Firstpage

181

Lastpage

184

Abstract

By utilizing low-temperature grown GaAs (LT-GaAs) as the absorption material, subbandgap detection is possible due to mid gap defects and As precipitates. In this paper, the authors demonstrate the first 1.55 /spl mu/m photodetector in GaAs based material. Due to the short carrier trapping time, a bandwidth of over 20 GHz and a saturation power exceeding 10 mW are measured in this photodetector.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; molecular beam epitaxial growth; optical saturation; p-i-n photodiodes; photodetectors; semiconductor growth; 1.55 /spl mu/m photodetector; 1.55 mum; 10 mW; 20 GHz; As precipitates; GaAs; GaAs based material; absorption material; high saturation power p-i-n photodetectors; high speed; low-temperature grown GaAs; mid gap defects; saturation power; short carrier trapping time; subbandgap detection; Absorption; Bandwidth; Frequency response; Gallium arsenide; Optical filters; Optical saturation; Optical waveguides; PIN photodiodes; Photodetectors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1998. MWP '98. International Topical Meeting on

Conference_Location

Princeton, NJ, USA

Print_ISBN

0-7803-4936-9

Type

conf

DOI

10.1109/MWP.1998.745658

Filename

745658