FEM analysis of GaN based surface acoustic wave resonators

Author

Stefanescu, A. ; Muller, A. ; Dinescu, A. ; Konstantinidis, G. ; Cismaru, A. ; Stavrinidis, A. ; Neculoiu, D.

Author_Institution

IMT Bucharest, Bucharest, Romania

Volume

1

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

177

Lastpage

180

Abstract

For the integration of surface acoustic wave (SAW) devices with nanostructures, numerical simulations must be employed. This paper describes finite element (FEM) models for a basic periodic cell of two types of SAW devices on GaN/Si devoted for GHz applications. E-beam lithographical techniques have been used for IDT fingers of 200nm wide. On wafer measurements of S parameters have shown a good agreement with the simulation results regarding the operation frequency.

Keywords

electron beam lithography; finite element analysis; gallium compounds; surface acoustic wave resonators; FEM analysis; GHz application; GaN based surface acoustic wave resonators; S parameters; basic periodic cell; e-beam lithographical technique; finite element models; nanostructures; numerical simulation; surface acoustic wave devices; Electrodes; Finite element methods; Gallium nitride; Resonant frequency; Silicon; Surface acoustic wave devices; Surface acoustic waves; E-beam nanolithography; FEM simulation; surface acoustic waves (SAW);

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095751

Filename

6095751