Bandwidth characteristics of InP/InGaAs uni-traveling-carrier photodiodes

Author

Shimizu, N. ; Watanabe, N. ; Furuta, T. ; Ishibashi, T.

Author_Institution

NTT Opt. Network Syst. Labs., Yokosuka, Japan

fYear

1998

fDate

12-14 Oct. 1998

Firstpage

193

Lastpage

194

Abstract

We report on the photoresponse of InP-InGaAs uni-traveling-carrier photodiodes (UTC-PDs) for different absorption layer thicknesses. The result indicates that the bandwidth is described by a constant diffusion coefficient, which is as high as that for majority electrons. This is contrary to the theoretical analysis, which predicts a 50% reduction in electron mobility due to coupled polar-phonon plasmon scattering in the 10/sup 18/ cm/sup 3/ doping range.

Keywords

III-V semiconductors; electron mobility; gallium arsenide; indium compounds; phonon-plasmon interactions; photodetectors; photodiodes; semiconductor doping; InP-InGaAs; InP-InGaAs uni-traveling-carrier photodiodes; absorption layer thicknesses; bandwidth characteristics; constant diffusion coefficient; coupled polar-phonon plasmon scattering; doping range; electron mobility; majority electron; photoresponse; theoretical analysis; Absorption; Bandwidth; Doping; Electron mobility; Indium gallium arsenide; Indium phosphide; Laboratories; Lasers and electrooptics; Photodiodes; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1998. MWP '98. International Topical Meeting on

Conference_Location

Princeton, NJ, USA

Print_ISBN

0-7803-4936-9

Type

conf

DOI

10.1109/MWP.1998.745661

Filename

745661