DocumentCode
2562639
Title
On the surface modes at the boundary between the media with normally and inversely populated levels
Author
Brazis, Romuald
Author_Institution
Centre for Phys. Sci. & Technol., Vilnius, Lithuania
fYear
2011
fDate
26-30 June 2011
Firstpage
1
Lastpage
4
Abstract
Within the COST MP0805 and COST MP0702 Actions, III-V group nitride compound semiconductors are considered under the conditions of inverse population of electron levels (or bands), or the inverse population of lattice vibration (phonon) bands. The last case (referring to terahertz photonics) is only briefly outlined, and the first case referring to visible (blue) photonics is in the main focus of the article. Aiming at experimental implications, frustrated total reflection spectra in GaN/InxGa1-xN heterostructures are calculated showing the possibility of resonance enhancement of the stimulated emission of light due to interface mode excitation.
Keywords
III-V semiconductors; gallium compounds; indium compounds; lattice dynamics; population inversion; semiconductor heterojunctions; stimulated emission; wide band gap semiconductors; COST MP0702; COST MP0805; GaN-InxGa1-xN; III-V group nitride compound semiconductors; electron levels; inverse population; inversely populated levels; lattice vibration; media boundary; normally populated levels; phonon bands; semiconductors heterostructures; stimulated emission; surface modes; terahertz photonics; total reflection spectra; visible blue photonics; Absorption; Dispersion; Gallium nitride; Phonons; Photonics; Reflection; Stimulated emission; III–V-group nitrides; population inversion; sub-wavelength photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks (ICTON), 2011 13th International Conference on
Conference_Location
Stockholm
ISSN
2161-2056
Print_ISBN
978-1-4577-0881-7
Electronic_ISBN
2161-2056
Type
conf
DOI
10.1109/ICTON.2011.5971090
Filename
5971090
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