Direct bonding of high quality InP on Si and its application to optoelectronic devices

Author

Mori, Kazuo ; Tokutome, Keiich ; Sugou, Shigeo

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

296

Abstract

We present the bonding of high quality InGaAs/InP MQW structures on Si. The etch-pit densities (EPDs) of the InP surfaces were significantly low (/spl sim/10/sup 4/ cm/sup -2/). The dislocation reduction mechanism was deduced from the results obtained by using transmission electron microscopy (TEM) and by comparing buffer layer structures on Si. We also report on low threshold room temperature (RT) continuous-wave (CW) operation of InGaAs/InGaAsP MQW lasers on Si. Furthermore, monolithic integration of lasers with Si V-grooves after bonding was tried and the preliminary results are reported.

Keywords

III-V semiconductors; dislocation etching; gallium arsenide; indium compounds; integrated optoelectronics; optical fabrication; quantum well lasers; ridge waveguides; semiconductor quantum wells; transmission electron microscopy; waveguide lasers; 1.55 mum; InGaAs-InGaAsP; InGaAs-InP; InGaAs/InGaAsP MQW lasers; MQW ridge waveguide lasers; Si; Si V-grooves; buffer layer structures; direct bonding; dislocation reduction mechanism; etch-pit densities; high quality InGaAs/InP MQW structures; high quality InP; low threshold room temperature continuous-wave operation; monolithic integration; optoelectronic devices; transmission electron microscopy; Bonding; Buffer layers; Electrons; Fiber lasers; Indium phosphide; Optoelectronic devices; Quantum well devices; Substrates; Thermal stresses; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571689

Filename

571689