A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications)

Author

Dherbecourt, Pascal ; Latry, Olivier ; Joubert, Eric ; Dehais-Mourgues, Karine ; Maanane, Hichame ; Sipma, Jean Pierre ; Eudeline, Philippe

Author_Institution

Groupe de Phys. des Mater., Normandie Univ.-Univ. de Rouen, St. Etienne du Rouvray, France

fYear

2014

fDate

14-16 April 2014

Firstpage

1573

Lastpage

1578

Abstract

This paper describes the conception and making of an ageing workbench for power microwave transistors. This bench has the particularity to address high power components reaching one KW pulse operating, over the L-band with in-situ electrical measurements process. Considering three kinds of stresses, we present results regarding the performance and reversible damage of a commercial silicon transistor technology for radar applications.

Keywords

UHF amplifiers; elemental semiconductors; microwave power transistors; radar applications; semiconductor device reliability; silicon; L-band LDMOS amplifier reliability; Si; commercial silicon transistor technology; electronic power transistors reliability; high power components; in-situ electrical measurements; power microwave transistors; radar applications; workbench development; Aging; Current measurement; Pulse measurements; Radio frequency; Stress; Temperature measurement; Transistors; Microwave; ageing; power transistor; reliability; robustness electrical characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Computing and Systems (ICMCS), 2014 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4799-3823-0

Type

conf

DOI

10.1109/ICMCS.2014.6911246

Filename

6911246