Title :
A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications)
Author :
Dherbecourt, Pascal ; Latry, Olivier ; Joubert, Eric ; Dehais-Mourgues, Karine ; Maanane, Hichame ; Sipma, Jean Pierre ; Eudeline, Philippe
Author_Institution :
Groupe de Phys. des Mater., Normandie Univ.-Univ. de Rouen, St. Etienne du Rouvray, France
Abstract :
This paper describes the conception and making of an ageing workbench for power microwave transistors. This bench has the particularity to address high power components reaching one KW pulse operating, over the L-band with in-situ electrical measurements process. Considering three kinds of stresses, we present results regarding the performance and reversible damage of a commercial silicon transistor technology for radar applications.
Keywords :
UHF amplifiers; elemental semiconductors; microwave power transistors; radar applications; semiconductor device reliability; silicon; L-band LDMOS amplifier reliability; Si; commercial silicon transistor technology; electronic power transistors reliability; high power components; in-situ electrical measurements; power microwave transistors; radar applications; workbench development; Aging; Current measurement; Pulse measurements; Radio frequency; Stress; Temperature measurement; Transistors; Microwave; ageing; power transistor; reliability; robustness electrical characterization;
Conference_Titel :
Multimedia Computing and Systems (ICMCS), 2014 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4799-3823-0
DOI :
10.1109/ICMCS.2014.6911246
