High efficiency silicon solar cells for space use

Author

Uesugi, H. ; Noguchi, T. ; Katsu, T. ; Tonomura, Y. ; Hisamatsu, T. ; Saga, T. ; Suzuki, A.

Author_Institution

Nat. Space Dev. Agency of Japan, Ibaraki, Japan

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1521

Abstract

High-efficiency silicon solar cells for space use were developed, and the manufacturing process was established. The maximum size of these cells is 4×6 cm. The cells have fine grid patterns formed by photolithography and the lift-off technique. Obtained AM0 efficiencies of 50, 70, and 100 μm-thick 4×6 cm BSFR cells at 28°C were 14.3%, 14.5%, and 14.8%, respectively. Those of 200 μm BSR cells with 10 Ω-cm substrate and 2 Ω-cm substrate were 12.7% and 13.6%, respectively. Work to increase the electrical output of these cells is discussed. At present nontexturized 100 μm cells show 16.1% and texturized 200 μm cells show 17.3%

Keywords

elemental semiconductors; photolithography; silicon; solar cells; 100 micron; 12.7 percent; 13.6 percent; 14.3 percent; 14.5 percent; 14.8 percent; 16.1 percent; 17.3 percent; 200 micron; 28 degC; 50 micron; 70 micron; AM0 efficiencies; Si; electrical output; grid patterns; high efficiency; lift-off technique; nontexturised cells; photolithography; space solar cells; texturised cells; Boron; Electrical resistance measurement; Electrons; Fabrication; Lithography; Photovoltaic cells; Radiometry; Satellites; Silicon; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169458

Filename

169458