Title :
Through Silicon Via stress characterization
Author :
Dao, Thuy ; Triyoso, Dina H. ; Petras, Mike ; Canonico, Michael
Author_Institution :
Freescale Semicond., Austin, TX, USA
Abstract :
In this paper, we will present Micro Raman stress data of Through Silicon Vias (TSV) with different shapes and sizes & spacing, and discuss design considerations.
Keywords :
integrated circuit design; wafer-scale integration; Micro Raman stress data; Si; Through Silicon Via stress characterization; design consideration; Capacitive sensors; Frequency; Manufacturing; Optical films; Phonons; Silicon; Strain measurement; Stress; Through-silicon vias; Tungsten;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166260
