• DocumentCode
    2562856
  • Title

    Through Silicon Via stress characterization

  • Author

    Dao, Thuy ; Triyoso, Dina H. ; Petras, Mike ; Canonico, Michael

  • Author_Institution
    Freescale Semicond., Austin, TX, USA
  • fYear
    2009
  • fDate
    18-20 May 2009
  • Firstpage
    39
  • Lastpage
    41
  • Abstract
    In this paper, we will present Micro Raman stress data of Through Silicon Vias (TSV) with different shapes and sizes & spacing, and discuss design considerations.
  • Keywords
    integrated circuit design; wafer-scale integration; Micro Raman stress data; Si; Through Silicon Via stress characterization; design consideration; Capacitive sensors; Frequency; Manufacturing; Optical films; Phonons; Silicon; Strain measurement; Stress; Through-silicon vias; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4244-2933-2
  • Electronic_ISBN
    978-1-4244-2934-9
  • Type

    conf

  • DOI
    10.1109/ICICDT.2009.5166260
  • Filename
    5166260
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2562856