Through silicon via redistribution of I/O pads for 4-side butt-able imaging detectors

Author

Seller, Paul ; Bell, S. ; Wilson, Matthew D. ; Veale, Matthew C.

Author_Institution

Sci. & Technol. Facilities Council, Rutherford Appleton Lab., Didcot, UK

fYear

2012

fDate

Oct. 27 2012-Nov. 3 2012

Firstpage

4142

Lastpage

4146

Abstract

An 80×80 pixel ASIC for connection to CdTe detectors for spectroscopic X-ray imaging has been designed at the Rutherford Appleton Laboratory. The 20mm × 21.4mm ASIC is intrinsically 3-side butt-able when bump bonded to a 20mm × 20mm detector. The 4th edge has readout structures and the input/output (110) pads for wire bonding. This necessitates 3mm of inactive space between detectors on this edge when the detectors are tiled together. To reduce this lost space we have redistributed the 110 pads through the ASIC silicon substrate to the back of the ASIC and wire bonded on the back of the module. This wafer level technology step performed by Tohoku-MicroTec Co. Ltd. allows much greater area coverage for modular solid state detectors. The paper describes the process and results from first 8inch wafers of devices.

Keywords

X-ray imaging; X-ray spectroscopy; nuclear electronics; readout electronics; silicon radiation detectors; 4-side buttable imaging detectors; ASIC silicon substrate; CdTe detectors; I/O pads; Rutherford Appleton Laboratory; Tohoku-MicroTec Co. Ltd; input/output pads; modular solid state detectors; readout structures; spectroscopic X-ray imaging; wafer level technology; wire bonding; CZT detector; Interconnect; Through Silicon Vias; X-ray detector; X-ray imaging; small pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

978-1-4673-2028-3

Type

conf

DOI

10.1109/NSSMIC.2012.6551947

Filename

6551947