Proton and electron irradiation of MOCVD InP solar cells: Experimental results and radiation modeling

Author

Walters, R.J. ; Messenger, S.R. ; Summers, G.P. ; Burke, E.A. ; Keavney, C.J.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1560

Abstract

1 MeV electron and 10 MeV proton irradiation of high-efficiency (>18%, 1 sun, AM0) InP solar cells grown by metalorganic chemical vapor deposition (MOCVD) is reported. The MOCVD InP cells are shown to be more radiation resistant than Si and GaAs cells, especially at high fluences. Deep-level transient spectroscopy (DLTS) measurements on the InP solar cells are reported. The defect behavior is compared with cell parameters following irradiation and subsequent annealing stages. The correlation between changes in the solar cell output and the majority carrier (hole) DLTS spectrum reported in irradiated diffused junction InP was not observed in MOCVD InP. An approach to correlating electron- and proton-induced damage in InP solar cells based on calculations of the nonionizing energy loss (NIEL) is described

Keywords

CVD coatings; III-V semiconductors; annealing; chemical vapour deposition; deep level transient spectroscopy; electron beam effects; indium compounds; proton effects; solar cells; DLTS; InP; MOCVD InP solar cells; annealing; deep-level transient spectroscopy; defect behavior; electron irradiation; high-efficiency; metalorganic chemical vapor deposition; nonionizing energy loss; proton irradiation; radiation modeling; Annealing; Chemical vapor deposition; Electrons; Gallium arsenide; Indium phosphide; MOCVD; Photovoltaic cells; Protons; Spectroscopy; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169466

Filename

169466