Title :
Analysis of space flight data of InP solar cells in EXOS-D orbit
Author :
Yamaguchi, M. ; Hayashi, T. ; Ushirokawa, A. ; Takahashi, K. ; Takamoto, T. ; Okazaki, H. ; Ohmori, M. ; Ikegami, S. ; Arai, H.
Author_Institution :
NTT Opto-electron. Lab., Ibaraki, Japan
Abstract :
Flight data of InP solar cells in the EXOS-D orbit (in a high-altitude polar orbit) have been analyzed based on the effects of proton and electron irradiation on them. Good agreement between analytical results and flight data for InP solar cell properties in the EXOS-D orbit shows the validity of the analytical model and that this analytical model is useful for designing space power systems using InP cells in other orbits with known radiation environments. The InP solar cells are concluded to be applicable to space cells, especially in severe radiation environments
Keywords :
III-V semiconductors; electron beam effects; indium compounds; proton effects; solar cells; space vehicle power plants; EXOS-D orbit; InP solar cells; electron irradiation; high-altitude polar orbit; proton irradiation; space flight data; space power systems; Coatings; Current density; Degradation; Electrons; Gallium arsenide; Indium phosphide; Lighting; Photovoltaic cells; Protons; Satellites;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169469
