Title :
Effect of base doping or radiation damage in GaAs single-junction solar cells
Author :
Bertness, K.A. ; Cavicchi, B.T. ; Kurtz, Sarah R. ; Olson, J.M. ; Kibbler, A.E. ; Kramer, C.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
Effects of 1 MeV electron irradiation damage are reported for thirteen GaAs n-p single-junction solar cells with base doping levels from 2×1016 to 3×1017 cm-3. The short-circuit current densities before and after irradiation to a fluence of 1015 cm-2 show a downward trend as a function of base doping, and the extent of radiation damage also increases as base doping increases. Radiation damage coefficients extracted through modeling of the spectral response curves are seen to vary from 2.5×10-8 to 1×10-7 over the range of p-type base doping covered
Keywords :
III-V semiconductors; gallium arsenide; p-n junctions; semiconductor doping; short-circuit currents; solar cells; GaAs; base doping; electron irradiation damage; n-p single-junction; p-type base doping; radiation damage; short-circuit current densities; single-junction solar cells; spectral response curves; Absorption; Doping; Electrons; Etching; Gallium arsenide; Heterojunctions; Lighting; Photovoltaic cells; Semiconductor process modeling; Short circuit currents;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169470
