Title :
The effect of dopant density on the radiation resistance of MOCVD InP solar cells
Author :
Walters, R.J. ; Keavney, C.J. ; Messenger, S.R. ; Summers, G.P. ; Burke, E.A.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
The effect of base dopant concentration (Na) on the radiation resistance of n+p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD) has been measured and analyzed. The highest efficiency measured after 1×1016 1-MeV electrons/cm-2 was 11.6% which is higher than reported for any other single-junction technology after this fluence. The efficiency of the InP cells degraded at approximately the same rate, independent of the base dopant level for 3×1015<Na<2×1017 cm-3. However, the short-circuit current, J sc, degraded more in the heavily doped samples while the open-circuit voltage, Voc, degraded more in the lightly doped samples. These results have been used to model the effect of the structure, especially the basic thickness, on the radiation response of the cell
Keywords :
CVD coatings; III-V semiconductors; indium compounds; semiconductor doping; short-circuit currents; solar cells; 11.6 percent; InP solar cells; MOCVD; base dopant concentration; dopant density; efficiency; metallorganic chemical vapor deposition; n+p InP solar cells; open-circuit voltage; radiation resistance; radiation response; short-circuit current; single-junction; Chemical analysis; Chemical technology; Chemical vapor deposition; Degradation; Electrical resistance measurement; Electrons; Indium phosphide; MOCVD; Photovoltaic cells; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169471
