• DocumentCode
    2563130
  • Title

    Factors impacting stabilization of tetragonal phase in HfxZr1−xO2 high-k dielectrics

  • Author

    Triyoso, D.H. ; Hegde, R.I. ; Gregory, R. ; Spencer, G. ; Schaeffer, J.K. ; Raymond, M.

  • Author_Institution
    Technol. Solutions Organ., Freescale Semicond. Inc., Austin, TX, USA
  • fYear
    2009
  • fDate
    18-20 May 2009
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    One method to further scale hafnium based dielectrics is to stabilize the tetragonal phase of HfO2 via zirconium addition. In this paper we investigated factors impacting stabilization of tetragonal phase in thin HfxZr1-xO2 high-k dielectrics such as deposition technique, precursor combination, annealing ambient and the use of capping layers.
  • Keywords
    annealing; coating techniques; dielectric materials; hafnium compounds; stability; HfxZr1-xO2; annealing ambient; capping layer; deposition technique; factors impacting stabilization; hafnium based dielectrics; high-k dielectrics; precursor combination; tetragonal phase; zirconium; Annealing; Atherosclerosis; Hafnium oxide; High-K gate dielectrics; Laser theory; Plasma temperature; Research and development; Semiconductor films; X-ray scattering; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4244-2933-2
  • Electronic_ISBN
    978-1-4244-2934-9
  • Type

    conf

  • DOI
    10.1109/ICICDT.2009.5166272
  • Filename
    5166272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2563130