Title :
Factors impacting stabilization of tetragonal phase in HfxZr1−xO2 high-k dielectrics
Author :
Triyoso, D.H. ; Hegde, R.I. ; Gregory, R. ; Spencer, G. ; Schaeffer, J.K. ; Raymond, M.
Author_Institution :
Technol. Solutions Organ., Freescale Semicond. Inc., Austin, TX, USA
Abstract :
One method to further scale hafnium based dielectrics is to stabilize the tetragonal phase of HfO2 via zirconium addition. In this paper we investigated factors impacting stabilization of tetragonal phase in thin HfxZr1-xO2 high-k dielectrics such as deposition technique, precursor combination, annealing ambient and the use of capping layers.
Keywords :
annealing; coating techniques; dielectric materials; hafnium compounds; stability; HfxZr1-xO2; annealing ambient; capping layer; deposition technique; factors impacting stabilization; hafnium based dielectrics; high-k dielectrics; precursor combination; tetragonal phase; zirconium; Annealing; Atherosclerosis; Hafnium oxide; High-K gate dielectrics; Laser theory; Plasma temperature; Research and development; Semiconductor films; X-ray scattering; Zirconium;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166272
