• DocumentCode
    2563176
  • Title

    Characterization of Ti-O-N films deposited on Ti-Ta-Nb substrate by plasma laser deposition

  • Author

    Cojocaru, Vasile-Danut ; Raducanu, Doina ; Scarisoreanu, Nicu Doinel ; Cinca, Ion

  • Author_Institution
    Nat. Inst. for R&D in Microtechnol. (IMT), Bucharest, Romania
  • Volume
    2
  • fYear
    2011
  • fDate
    17-19 Oct. 2011
  • Firstpage
    265
  • Lastpage
    268
  • Abstract
    In present days in-depth behaviour characterization of multifunctional deposited films for MEMS/BIO-MEMS applications, showed the need of adequate properties, in order to assure the demanded designed functions for envisaged applications, such as: physical, chemical, mechanical, tribological and biocompatible. The development of new materials for films deposition with high potential to be used in BIO-MEMS applications is a goal at national an international level. Recently, a new class of deposition materials consist in metal-oxy-nitrides Me-O-N (Me - transition metal) has been started to be investigated, because has been showed that the oxygen presence has as effect obtaining of mixture of specific properties for both nitrides (Me-N) and oxides (Me-O). A way to tailor the specific properties for deposited film consist in modifying the ratio O/N, in this way the deposited film specific properties are directed more towards to oxides/nitrides properties. In this paper partially data concerning O/N ratio influence upon films characteristics are presented.
  • Keywords
    atomic force microscopy; laser deposition; plasma deposition; refractive index; scanning electron microscopy; thin films; titanium compounds; AFM; MEMS-bioMEMS applications; SEM; Ti-Ta-Nb; TiON; TiTaNb substrate; metal-oxy-nitrides-transition metal films; multifunctional deposited films; nanostructured materials; plasma laser deposition; refractive index; Optical films; Substrates; Surface morphology; Surface treatment; X-ray diffraction; Plasma Laser Deposition; Ti-O-N films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2011 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-61284-173-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2011.6095787
  • Filename
    6095787