Micro-nanostructural and composition characterization of ZnO: Al doped films by SEM-EDX and HRTEM-EDX

Author

Vasile, E. ; Plugaru, R. ; Mihaiu, S. ; Toader, A.

Author_Institution

Nat. Inst. for R&D in Microtechnol. (IMT), Bucharest, Romania

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

273

Lastpage

276

Abstract

We present the results of a structural and compositional investigation of Al-doped thin films obtained by sol-gel deposition on Si/SiO₂ substrates. Taking into consideration the layer by layer deposition process and that the films contain 1-10 successive layers, the evolution of structure and elemental composition, especially Al concentration in the films were investigated by energy dispersive X-ray analyses in the scanning and high resolution transmission electron microscopy. Qualitative composition of the structures observed in the films have been evidenced in the elemental maps.

Keywords

II-VI semiconductors; X-ray chemical analysis; aluminium; nanostructured materials; scanning electron microscopy; semiconductor doping; semiconductor thin films; sol-gel processing; transmission electron microscopy; zinc compounds; HRTEM-EDX; SEM-EDX; ZnO:Al; composition characterization; elemental composition; energy dispersive X-ray analysis; high resolution transmission electron microscopy; layer deposition; micronanostructural characterization; scanning electron microscopy; sol-gel deposition; structure evolution; thin film; Dispersion; Films; Scanning electron microscopy; Silicon; Substrates; Zinc oxide; Al-doped ZnO films; HRTEM-EDX; SEM-EDX; STEM-EDX; elemental composition; elemental mapping; nanostructures; sol-gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095789

Filename

6095789