Title :
MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrates for nuclear radiation detector development
Author :
Niraula, M. ; Yasuda, Kazuhiro ; Namba, S. ; Kondo, Toshiaki ; Muramatsu, Shigeki ; Wajima, Y. ; Yamashita, Hiromasa ; Agata, Y.
Author_Institution :
Nagoya Inst. of Technol., Nagoya, Japan
fDate :
Oct. 27 2012-Nov. 3 2012
Abstract :
Details about the MOVPE growth of thick single crystal CdZnTe layers on (211)Si substrates are presented. The growth was carried out at a high substrate temperature of 650°C. Strict control of Zn-concentration in the grown epilayers was achieved by controlling the source materials flow-rates and ratio. The 4.2 K PL results show high intensity bound-exciton peaks which shifted to higher energies with increasing Zn-concentrations. A p-CdZnTe/p-CdTe/n-CdTe/n+ -Si heterojunction diode was fabricated and evaluated for its possible application in nuclear radiation detector applications, which exhibited good rectification property.
Keywords :
crystal growth from melt; semiconductor epitaxial layers; silicon radiation detectors; MOVPE growth; Si substrates; Zn-concentration; heterojunction diode fabrication; nuclear radiation detector development; rectification property; source material flow-rates; temperature 650 degC; thick single crystal CdZnTe epitaxial layers;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4673-2028-3
DOI :
10.1109/NSSMIC.2012.6551960
