Title :
A 2.5 GHz radiation hard fully self-biased PLL using 0.25 µm SOS-CMOS technology
Author :
Ghosh, Partha Pratim ; Xiao, E.
Author_Institution :
Electr. Eng. Dept., Univ. of Texas, Arlington, TX, USA
Abstract :
This paper presents a radiation hard PLL using 0.25 mum SOS-CMOS technology for space applications. This PLL is fully self-biased and gives output frequency of 2.5 GHz. This robust PLL successfully performs for all the process corners from -40degC to 80degC under Cadence-SpectreRF schematic and layout simulations. A new modification has been done on the differential buffers of the VCO used in the PLL to reduce phase noise. Simulation results from extracted layout including buffers and pads are enlisted for pre and post radiation environments.
Keywords :
CMOS integrated circuits; phase locked loops; phase noise; radiation hardening (electronics); voltage-controlled oscillators; Cadence-SpectreRF schematic simulation; SOS-CMOS technology; VCO; differential buffers; frequency 2.5 GHz; layout simulation; phase noise; radiation hard fully self-biased PLL; size 0.25 mum; space application; temperature -40 degC to 80 degC; Bandwidth; CMOS technology; Charge carrier processes; Digital circuits; Frequency; MOSFETs; Phase locked loops; Silicon; Space technology; Voltage; CMOS; PLL; Rad-Hard; SOS - Silicon on Sapphire; Self-bias;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166278