DocumentCode
2563290
Title
Quantum Hall samples prepared by helium-ion implantation
Author
Bruus, H. ; Lindelof, P.E. ; Veje, E.
Author_Institution
Danish Inst. of Fundamental Metrol., Lyngby, Denmark
fYear
1990
fDate
11-14 June 1990
Firstpage
315
Lastpage
316
Abstract
GaAs/GaAlAs heterostructure-based quantum Hall samples with a wide range of electron mobilities have been produced using ion implantation. The purpose was to optimize the samples for use in metrology. In particular, the critical current and the nonohmic behavior of the samples in the vicinity of a quantum Hall plateau were studied.<>
Keywords
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; helium; ion implantation; measurement standards; p-n heterojunctions; quantum Hall effect; GaAs-GaAlAs; I-V characteristics; III-V semiconductors; critical current; electron mobilities; heterostructure; ion implantation; nonohmic behavior; quantum Hall effect; Calibration; Critical current; Electric resistance; Electrical resistance measurement; Electron mobility; Gallium arsenide; Laboratories; Metrology; Wire; Wounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location
Ottawa, Ontario, Canada
Type
conf
DOI
10.1109/CPEM.1990.110039
Filename
110039
Link To Document